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Summary: A discrete power device product engineer with certain work experience, responsible for the development of new discrete devices (such as SiC、GaN、SGT、SJ etc.), covering from target specification setting to large-scale production stage. The job responsibilities include testing plan design, product characterization verification and reliability assessment, improvement of product yield, resolution of various production related issues, and continuous quality improvement. 具備一定工作經驗的分立功率器件產品工程師，負責分立器件（SiC、GaN、SGT、SJ等）新產品的開發工作，涵蓋從目標規格設定到大規模量產階段。工作內容包括測試計劃設計、產品特性化驗證和可靠性鑒定、產品良率的提升、生產相關的各類問題的解決以及持續的質量改進。 RESPONSIBILITIES: 1. Co-work with device design engineer, marketing engineer to finish device requirement analysis, competitor analysis, construction analysis, build up the product development target and plan. Product types include and not limited to SiC, GaN, SGT, SJ etc. 與器件設計工程師, 市場工程師共同完成器件設計需求分析、競爭對手分析、結構分析等，制定產品開發目標和計劃。產品類型包括但不限于SiC、GaN、SGT、SJ等。 2. Collaborate with testing engineers to develop device testing plans and schemes, and complete testing verification.協同測試工程師制定器件測試計劃和測試方案，完成測試驗證。 3. Responsible for following up on the fab and packaging of new products throughout the process, and analyzing, identifying, and addressing various issues during the product preparation process. 負責全程跟進新產品的流片、封裝，并分析、識別、處理產品制備過程中的各類問題。 4. Support product characterization, collaborate with design, application engineer to write the datasheet specifications. 完成產品特性驗證，與設計、應用工程師合作編寫數據表規范。 5. Complete product reliability testing and continuously promote product yield improvement.完成產品的可靠性測試并持續推進產品的良率改善。 6. Collaborate with internal team for engineering sample support and delivery. 協同內部團隊，確保工程樣品的按時交付； 7. Engage in solving all issues meet internal or external to improve the product quality across the product lifetime. 介入解決產品生命周期中面臨的各種內部或外部問題，以提升產品質量； 8. Support on products subcon (fab/bumping/assembly/test etc.) transfer. 參與產品外包工廠(晶圓代工/凸點代工/封裝/測試等)的遷移。 REQUIREMENTS: 1. Master's students majoring in microelectronics and related fields, with at least two years of work experience in domestic and international power device semiconductor companies preferred. 微電子及相關專業碩士研究生，有國內、國際功率器件半導體大廠工作兩年以上經歷者優先。 2. NPI experience of SiC, GaN, SGT MOS etc. products development is specially preferred. 有SiC、GaN、SGT MOS等產品開發NPI經驗者尤佳。 3. Familiar with discrete power device product characterization and qualification (ESD/LU/HTRB/HTGB/H3TRB/IOL etc.). 熟悉分立功率器件的特性化驗證和可靠性鑒定(ESD/LU/HTRB/HTGB/H3TRB/IOL etc.). 4. Strong experience in managing R